Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA220N055T7
V DSS
I D25
R DS(on)
= 55 V
= 220 A
≤ 4.0 m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (7-lead) (IXTA..7)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
55
55
V
V
V GSM
Transient
± 20
V
1
I D25
I LRMS
I DM
I AR
E AS
dv/dt
T C = 25 ° C
Package Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
220
120
600
25
1.0
3
A
A
A
A
J
V/ns
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
T J ≤ 175 ° C, R G = 5 ?
P D
T J
T JM
T stg
T L
T SOLD
Weight
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
430
-55 ... +175
175
-55 ... +175
300
260
3
W
° C
° C
° C
° C
° C
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications
Automotive
- Motor Drives
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 25 A, Note 1
T J = 150 ° C
55
2.0
3.1
4.0
± 200
5
250
4.0
V
V
nA
μ A
μ A
m ?
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99683 (11/06)
? 2006 IXYS CORPORATION All rights reserved
相关PDF资料
IXTA220N055T MOSFET N-CH 55V 220A TO-263
IXTA220N075T7 MOSFET N-CH 75V 220A TO-263-7
IXTA230N075T2 MOSFET N-CH 75V 230A TO-263
IXTA240N055T7 MOSFET N-CH 55V 240A TO-263-7
IXTA260N055T2-7 MOSFET N-CH 55V 260A TO-263
IXTA2N100P MOSFET N-CH 1000V 2A TO-263
IXTA2N100 MOSFET N-CH 1000V 2A TO-263
IXTA2N80 MOSFET N-CH 800V 2A TO-263
相关代理商/技术参数
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